Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor; Actual Problems of Electronic Instrument Engineering (APEIE-2018); Vol. 1, pt. 1

Chi tiết về thư mục
Parent link:Actual Problems of Electronic Instrument Engineering (APEIE-2018): Proceedings of 14th International Scientific-Technical Conference, Novosibirsk, October 2-6, 2018/ Novosibirsk State Technical University.— , 2018
Vol. 1, pt. 1.— 2018.— [P. 182-187]
Nhiều tác giả của công ty: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора, Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение ядерно-топливного цикла
Tác giả khác: Varlachev V. A. Valery Aleksandrovich, Emets E. G. Evgeny Gennadievich, Lebedev I. I. Ivan Igorevich, Zolotykh D. E. Daniil Evgenjevich
Tóm tắt:Title screen
In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.
Режим доступа: по договору с организацией-держателем ресурса
Ngôn ngữ:Tiếng Anh
Được phát hành: 2018
Những chủ đề:
Truy cập trực tuyến:https://doi.org/10.1109/APEIE.2018.8545252
Định dạng: Điện tử Chương của sách
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658963

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