Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor

Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor

Bibliographic Details
Parent link:Actual Problems of Electronic Instrument Engineering (APEIE-2018): Proceedings of 14th International Scientific-Technical Conference, Novosibirsk, October 2-6, 2018/ Novosibirsk State Technical University.— , 2018
Vol. 1, pt. 1.— 2018.— [P. 182-187]
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора, Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение ядерно-топливного цикла
Other Authors: Varlachev V. A. Valery Aleksandrovich, Emets E. G. Evgeny Gennadievich, Lebedev I. I. Ivan Igorevich, Zolotykh D. E. Daniil Evgenjevich
Summary:Title screen
In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2018
Subjects:
электронный ресурс
труды учёных ТПУ
single-crystal silicon
reactor
neutrons
integral flux
nuclear doping
монокристаллический кремний
реакторы
нейроны
интегральные показатели
Online Access:https://doi.org/10.1109/APEIE.2018.8545252
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658963

Internet

https://doi.org/10.1109/APEIE.2018.8545252

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