Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor; Actual Problems of Electronic Instrument Engineering (APEIE-2018); Vol. 1, pt. 1
| Parent link: | Actual Problems of Electronic Instrument Engineering (APEIE-2018): Proceedings of 14th International Scientific-Technical Conference, Novosibirsk, October 2-6, 2018/ Novosibirsk State Technical University.— , 2018 Vol. 1, pt. 1.— 2018.— [P. 182-187] |
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| Corporate Authors: | , |
| Other Authors: | , , , |
| Summary: | Title screen In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://doi.org/10.1109/APEIE.2018.8545252 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658963 |
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| 200 | 1 | |a Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor |f V. A. Varlachev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 187 (5 tit.)] | ||
| 330 | |a In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Actual Problems of Electronic Instrument Engineering (APEIE-2018) |o Proceedings of 14th International Scientific-Technical Conference, Novosibirsk, October 2-6, 2018 |o in 8 vol. |f Novosibirsk State Technical University |d 2018 | ||
| 463 | |t Vol. 1, pt. 1 |v [P. 182-187] |d 2018 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a single-crystal silicon | |
| 610 | 1 | |a reactor | |
| 610 | 1 | |a neutrons | |
| 610 | 1 | |a integral flux | |
| 610 | 1 | |a nuclear doping | |
| 610 | 1 | |a монокристаллический кремний | |
| 610 | 1 | |a реакторы | |
| 610 | 1 | |a нейроны | |
| 610 | 1 | |a интегральные показатели | |
| 701 | 1 | |a Varlachev |b V. A. |c physicist, specialist in the field of nuclear physics |c Professor-consultant of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1948- |g Valery Aleksandrovich |y Tomsk |3 (RuTPU)RU\TPU\pers\33722 |9 17353 | |
| 701 | 1 | |a Emets |b E. G. |c physicist, specialist in the field of nuclear physics |c Engineer-designer of Tomsk Polytechnic University |f 1984- |g Evgeny Gennadievich |3 (RuTPU)RU\TPU\pers\33721 | |
| 701 | 1 | |a Lebedev |b I. I. |c specialist in the field of power engineering |c engineer of Tomsk Polytechnic University |f 1990- |g Ivan Igorevich |3 (RuTPU)RU\TPU\pers\34232 |9 17763 | |
| 701 | 1 | |a Zolotykh |b D. E. |g Daniil Evgenjevich | |
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| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Отделение ядерно-топливного цикла |3 (RuTPU)RU\TPU\col\23554 |
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