Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings
| Parent link: | Surface and Coatings Technology Vol. 357.— 2019.— [P. 348–352] |
|---|---|
| Hovedforfatter: | Gaydaychuk A. V. Alexander Valerievich |
| Corporate Authors: | Национальный исследовательский Томский политехнический университет (ТПУ) Инженерная школа новых производственных технологий (ИШНПТ) Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" (НПЛ ИПЭПТ), Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов |
| Andre forfattere: | Zenkin S. P. Sergey Petrovich, Linnik S. A. Stepan Andreevich |
| Summary: | Title screen Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800?°C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to ?0.25?GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides. Режим доступа: по договору с организацией-держателем ресурса |
| Udgivet: |
2019
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| Fag: | |
| Online adgang: | https://doi.org/10.1016/j.surfcoat.2018.10.030 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658731 |
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Udgivet: (2016) -
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