Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings
| Parent link: | Surface and Coatings Technology Vol. 357.— 2019.— [P. 348–352] |
|---|---|
| Main Author: | |
| Corporate Authors: | , |
| Other Authors: | , |
| Summary: | Title screen Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800?°C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to ?0.25?GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides. Режим доступа: по договору с организацией-держателем ресурса |
| Published: |
2019
|
| Subjects: | |
| Online Access: | https://doi.org/10.1016/j.surfcoat.2018.10.030 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658731 |