Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings
| Parent link: | Surface and Coatings Technology Vol. 357.— 2019.— [P. 348–352] |
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| Автор: | |
| Співавтори: | , |
| Інші автори: | , |
| Резюме: | Title screen Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800?°C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to ?0.25?GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides. Режим доступа: по договору с организацией-держателем ресурса |
| Опубліковано: |
2019
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| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1016/j.surfcoat.2018.10.030 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658731 |
| Резюме: | Title screen Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800?°C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to ?0.25?GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/j.surfcoat.2018.10.030 |