Bent crystal channeling of 255 MeV electrons

Bent crystal channeling of 255 MeV electrons

Bibliografiske detaljer
Parent link:	Physics Letters A Vol. 382, iss. 4.— 2018.— [P. 153-156]
Hovedforfatter:	Takabayashi Y. Yuichi
Institution som forfatter:	Национальный исследовательский Томский политехнический университет Школа базовой инженерной подготовки Отделение естественных наук
Andre forfattere:	Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Summary:	Title screen Charged particles channeled in a bent crystal plane are known to be deflected along the bent plane. Such studies have mainly been performed for high-energy positively-charged particles such as protons, and recently for electrons with energies from 855 MeV to 20.35 GeV. In this work, we present experimental results on the bent crystal channeling of electrons for a lower energy region (255 MeV), where the multiple scattering effect in a crystal is expected to be more dominant. Angular distributions of electrons transmitted through a bent Si crystal have been measured, which are in good agreement with the simulation results. Режим доступа: по договору с организацией-держателем ресурса
Udgivet:	2018
Fag:	электронный ресурс труды учёных ТПУ кристаллы каналы изгиб отклонения лучи
Online adgang:	https://doi.org/10.1016/j.physleta.2017.11.015
Format:	Electronisk Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658368

Lignende værker

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