Bent crystal channeling of 255 MeV electrons

Bibliographic Details
Parent link:Physics Letters A
Vol. 382, iss. 4.— 2018.— [P. 153-156]
Main Author: Takabayashi Y. Yuichi
Corporate Author: Национальный исследовательский Томский политехнический университет Школа базовой инженерной подготовки Отделение естественных наук
Other Authors: Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Summary:Title screen
Charged particles channeled in a bent crystal plane are known to be deflected along the bent plane. Such studies have mainly been performed for high-energy positively-charged particles such as protons, and recently for electrons with energies from 855 MeV to 20.35 GeV. In this work, we present experimental results on the bent crystal channeling of electrons for a lower energy region (255 MeV), where the multiple scattering effect in a crystal is expected to be more dominant. Angular distributions of electrons transmitted through a bent Si crystal have been measured, which are in good agreement with the simulation results.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2018
Subjects:
Online Access:https://doi.org/10.1016/j.physleta.2017.11.015
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658368