Bent crystal channeling of 255 MeV electrons; Physics Letters A; Vol. 382, iss. 4
| Parent link: | Physics Letters A Vol. 382, iss. 4.— 2018.— [P. 153-156] |
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| Інші автори: | , |
| Резюме: | Title screen Charged particles channeled in a bent crystal plane are known to be deflected along the bent plane. Such studies have mainly been performed for high-energy positively-charged particles such as protons, and recently for electrons with energies from 855 MeV to 20.35 GeV. In this work, we present experimental results on the bent crystal channeling of electrons for a lower energy region (255 MeV), where the multiple scattering effect in a crystal is expected to be more dominant. Angular distributions of electrons transmitted through a bent Si crystal have been measured, which are in good agreement with the simulation results. Режим доступа: по договору с организацией-держателем ресурса |
| Мова: | Англійська |
| Опубліковано: |
2018
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| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1016/j.physleta.2017.11.015 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658368 |