The Interface Influence in TiN/SiN x Multilayer Nanocomposite Under Irradiation

The Interface Influence in TiN/SiN x Multilayer Nanocomposite Under Irradiation

Bibliographic Details
Parent link:Russian Physics Journal
Vol. 60, iss. 9.— 2018.— [P. 1600-1609]
Corporate Author: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов
Other Authors: Uglov V. V. Vladimir Vasilievich, Safronov I. V., Kvasov N. T. Nikolay Trafimovich, Remnev G. E. Gennady Efimovich, Shimanskii V. I. Vitali Igorevich
Summary:Title screen
The paper focuses on studying the kinetics of radiation-induced point defects formed in TiN/SiN x multilayer nanocomposites with account of their generation, diffusion recombination, and the influence of sinks functioning as interfaces. In order to describe the kinetics in nanocrystalline TiN and amorphous SiN x phases, a finite-difference method is used to solve the system of balance kinetic equations for absolute defect concentrations depending on the spatiotemporal variables. A model of the disclination-dislocation interface structure is used to study the absorption of radiation-induced point defects on the boundaries in created stress fields. It is shown that the interface effectively absorbs point defects in these phases of TiN/SiN x multilayer nanocomposite, thereby reducing their amount within the space between phases. This behavior of point defects partially explains a mechanism of the radiation resistance in this type of nanocomposites.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2018
Subjects:
электронный ресурс
труды учёных ТПУ
аморфные вещества
композиты
многослойные композиты
интерфейс
кинетика
дисклинация
Online Access:https://doi.org/10.1007/s11182-018-1257-1
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657945

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