The Interface Influence in TiN/SiN x Multilayer Nanocomposite Under Irradiation
| Parent link: | Russian Physics Journal Vol. 60, iss. 9.— 2018.— [P. 1600-1609] |
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| Other Authors: | , , , , |
| Summary: | Title screen The paper focuses on studying the kinetics of radiation-induced point defects formed in TiN/SiN x multilayer nanocomposites with account of their generation, diffusion recombination, and the influence of sinks functioning as interfaces. In order to describe the kinetics in nanocrystalline TiN and amorphous SiN x phases, a finite-difference method is used to solve the system of balance kinetic equations for absolute defect concentrations depending on the spatiotemporal variables. A model of the disclination-dislocation interface structure is used to study the absorption of radiation-induced point defects on the boundaries in created stress fields. It is shown that the interface effectively absorbs point defects in these phases of TiN/SiN x multilayer nanocomposite, thereby reducing their amount within the space between phases. This behavior of point defects partially explains a mechanism of the radiation resistance in this type of nanocomposites. Режим доступа: по договору с организацией-держателем ресурса |
| Published: |
2018
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| Online Access: | https://doi.org/10.1007/s11182-018-1257-1 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657945 |