The Interface Influence in TiN/SiN x Multilayer Nanocomposite Under Irradiation
| Parent link: | Russian Physics Journal Vol. 60, iss. 9.— 2018.— [P. 1600-1609] |
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| Údar corparáideach: | |
| Rannpháirtithe: | , , , , |
| Achoimre: | Title screen The paper focuses on studying the kinetics of radiation-induced point defects formed in TiN/SiN x multilayer nanocomposites with account of their generation, diffusion recombination, and the influence of sinks functioning as interfaces. In order to describe the kinetics in nanocrystalline TiN and amorphous SiN x phases, a finite-difference method is used to solve the system of balance kinetic equations for absolute defect concentrations depending on the spatiotemporal variables. A model of the disclination-dislocation interface structure is used to study the absorption of radiation-induced point defects on the boundaries in created stress fields. It is shown that the interface effectively absorbs point defects in these phases of TiN/SiN x multilayer nanocomposite, thereby reducing their amount within the space between phases. This behavior of point defects partially explains a mechanism of the radiation resistance in this type of nanocomposites. Режим доступа: по договору с организацией-держателем ресурса |
| Teanga: | Béarla |
| Foilsithe / Cruthaithe: |
2018
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| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1007/s11182-018-1257-1 |
| Formáid: | Leictreonach Caibidil leabhair |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657945 |
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| 200 | 1 | |a The Interface Influence in TiN/SiN x Multilayer Nanocomposite Under Irradiation |f V. V. Uglov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 29 tit.] | ||
| 330 | |a The paper focuses on studying the kinetics of radiation-induced point defects formed in TiN/SiN x multilayer nanocomposites with account of their generation, diffusion recombination, and the influence of sinks functioning as interfaces. In order to describe the kinetics in nanocrystalline TiN and amorphous SiN x phases, a finite-difference method is used to solve the system of balance kinetic equations for absolute defect concentrations depending on the spatiotemporal variables. A model of the disclination-dislocation interface structure is used to study the absorption of radiation-induced point defects on the boundaries in created stress fields. It is shown that the interface effectively absorbs point defects in these phases of TiN/SiN x multilayer nanocomposite, thereby reducing their amount within the space between phases. This behavior of point defects partially explains a mechanism of the radiation resistance in this type of nanocomposites. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal | ||
| 463 | |t Vol. 60, iss. 9 |v [P. 1600-1609] |d 2018 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a аморфные вещества | |
| 610 | 1 | |a композиты | |
| 610 | 1 | |a многослойные композиты | |
| 610 | 1 | |a интерфейс | |
| 610 | 1 | |a кинетика | |
| 610 | 1 | |a дисклинация | |
| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 | |
| 701 | 1 | |a Safronov |b I. V. | |
| 701 | 1 | |a Kvasov |b N. T. |c physicist |c leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1949- |g Nikolay Trafimovich |3 (RuTPU)RU\TPU\pers\36768 | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
| 701 | 1 | |a Shimanskii |b V. I. |c Physicist |c Associate Scientist of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1986- |g Vitali Igorevich |3 (RuTPU)RU\TPU\pers\36738 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
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| 856 | 4 | 0 | |u https://doi.org/10.1007/s11182-018-1257-1 |
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