Stress imaging in structural challenging MEMS with high sensitivity using micro-Raman spectroscopy; Microelectronics Reliability; Vol. 79

Stress imaging in structural challenging MEMS with high sensitivity using micro-Raman spectroscopy; Microelectronics Reliability; Vol. 79

Détails bibliographiques
Parent link:Microelectronics Reliability
Vol. 79.— 2017.— [P. 104-110]
Collectivité auteur: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Autres auteurs: Meszmer P. Peter, Rodriguez (Rodriges) Contreras R. D. Raul David, Sheremet E. S. Evgeniya Sergeevna, Zahn Dietrich R. T., Wunderle B. Bernhard
Résumé:Title screen
The development cycle of microelectromechanical systems (MEMS) includes several numerical simulation and optimization iterations. To verify and calibrate the models with experimental data, the non-destructive measurement and imaging of stress distribution in structural challenging regions with high sensitivity is of great importance. This is possible to achieve using micro-Raman spectroscopy. Due to limitations of commercially available software regarding flexibility and sensitivity, the authors developed an alternative approach which ensures that the quality of spectra is taken into account in the evaluating calculations. In this way a remarkable stress resolution below 20 MPa becomes possible even on structural challenging MEMS devices.
Langue:anglais
Publié: 2017
Sujets:
электронный ресурс
труды учёных ТПУ
stress
simulation
spectroscopy
стресс
математическое моделирование
спектроскопия
Accès en ligne:https://doi.org/10.1016/j.microrel.2017.10.010
Format: Électronique Chapitre de livre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657275

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