Stress imaging in structural challenging MEMS with high sensitivity using micro-Raman spectroscopy

Stress imaging in structural challenging MEMS with high sensitivity using micro-Raman spectroscopy

Bibliographic Details
Parent link:	Microelectronics Reliability Vol. 79.— 2017.— [P. 104-110]
Corporate Author:	Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Other Authors:	Meszmer P. Peter, Rodriguez (Rodriges) Contreras R. D. Raul David, Sheremet E. S. Evgeniya Sergeevna, Zahn Dietrich R. T., Wunderle B. Bernhard
Summary:	Title screen The development cycle of microelectromechanical systems (MEMS) includes several numerical simulation and optimization iterations. To verify and calibrate the models with experimental data, the non-destructive measurement and imaging of stress distribution in structural challenging regions with high sensitivity is of great importance. This is possible to achieve using micro-Raman spectroscopy. Due to limitations of commercially available software regarding flexibility and sensitivity, the authors developed an alternative approach which ensures that the quality of spectra is taken into account in the evaluating calculations. In this way a remarkable stress resolution below 20 MPa becomes possible even on structural challenging MEMS devices.
Published:	2017
Subjects:	электронный ресурс труды учёных ТПУ stress simulation spectroscopy стресс математическое моделирование спектроскопия
Online Access:	https://doi.org/10.1016/j.microrel.2017.10.010
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657275

Internet

https://doi.org/10.1016/j.microrel.2017.10.010