Stress imaging in structural challenging MEMS with high sensitivity using micro-Raman spectroscopy; Microelectronics Reliability; Vol. 79
| Parent link: | Microelectronics Reliability Vol. 79.— 2017.— [P. 104-110] |
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| Institution som forfatter: | |
| Andre forfattere: | , , , , |
| Summary: | Title screen The development cycle of microelectromechanical systems (MEMS) includes several numerical simulation and optimization iterations. To verify and calibrate the models with experimental data, the non-destructive measurement and imaging of stress distribution in structural challenging regions with high sensitivity is of great importance. This is possible to achieve using micro-Raman spectroscopy. Due to limitations of commercially available software regarding flexibility and sensitivity, the authors developed an alternative approach which ensures that the quality of spectra is taken into account in the evaluating calculations. In this way a remarkable stress resolution below 20 MPa becomes possible even on structural challenging MEMS devices. |
| Sprog: | engelsk |
| Udgivet: |
2017
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| Fag: | |
| Online adgang: | https://doi.org/10.1016/j.microrel.2017.10.010 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657275 |
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| 200 | 1 | |a Stress imaging in structural challenging MEMS with high sensitivity using micro-Raman spectroscopy |f P. Meszmer [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 109-110 (29 tit.)] | ||
| 330 | |a The development cycle of microelectromechanical systems (MEMS) includes several numerical simulation and optimization iterations. To verify and calibrate the models with experimental data, the non-destructive measurement and imaging of stress distribution in structural challenging regions with high sensitivity is of great importance. This is possible to achieve using micro-Raman spectroscopy. Due to limitations of commercially available software regarding flexibility and sensitivity, the authors developed an alternative approach which ensures that the quality of spectra is taken into account in the evaluating calculations. In this way a remarkable stress resolution below 20 MPa becomes possible even on structural challenging MEMS devices. | ||
| 461 | |t Microelectronics Reliability | ||
| 463 | |t Vol. 79 |v [P. 104-110] |d 2017 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a stress | |
| 610 | 1 | |a simulation | |
| 610 | 1 | |a spectroscopy | |
| 610 | 1 | |a стресс | |
| 610 | 1 | |a математическое моделирование | |
| 610 | 1 | |a спектроскопия | |
| 701 | 1 | |a Meszmer |b P. |g Peter | |
| 701 | 1 | |a Rodriguez (Rodriges) Contreras |b R. D. |c Venezuelan physicist, doctor of science |c Professor of Tomsk Polytechnic University |f 1982- |g Raul David |3 (RuTPU)RU\TPU\pers\39942 |9 21179 | |
| 701 | 1 | |a Sheremet |b E. S. |c physicist |c Professor of Tomsk Polytechnic University |f 1988- |g Evgeniya Sergeevna |3 (RuTPU)RU\TPU\pers\40027 |9 21197 | |
| 701 | 1 | |a Zahn Dietrich |b R. T. | |
| 701 | 1 | |a Wunderle |b B. |g Bernhard | |
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