Structural Disorder and Electron Transport in Graphene at Low Temperatures; AIP Conference Proceedings; Vol. 1909 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2017 (AMHS’17)
| Parent link: | AIP Conference Proceedings Vol. 1909 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2017 (AMHS’17).— 2017.— [020016, 4 p.] |
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| निगमित लेखक: | |
| अन्य लेखक: | , , , , , |
| सारांश: | Title screen A theoretical study of electron transport characteristics of metalized epitaxial graphene with impurities and structural inhomogeneous of the short-range order type was performed. The electron relaxation time, mean free path, and diffusion coefficient were calculated and shown to be of the same order of magnitude as the corresponding values for phonon characteristics. It means that electron scattering on the short-range ordered domains has to be taken into account, especially at low temperatures when it may dominate phonon scattering. Режим доступа: по договору с организацией-держателем ресурса |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2017
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| विषय: | |
| ऑनलाइन पहुंच: | https://doi.org/10.1063/1.5013697 |
| स्वरूप: | इलेक्ट्रोनिक पुस्तक अध्याय |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657087 |
| सारांश: | Title screen A theoretical study of electron transport characteristics of metalized epitaxial graphene with impurities and structural inhomogeneous of the short-range order type was performed. The electron relaxation time, mean free path, and diffusion coefficient were calculated and shown to be of the same order of magnitude as the corresponding values for phonon characteristics. It means that electron scattering on the short-range ordered domains has to be taken into account, especially at low temperatures when it may dominate phonon scattering. Режим доступа: по договору с организацией-держателем ресурса |
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| डिजिटल ऑब्जेक्ट पहचानकर्ता: | 10.1063/1.5013697 |