Structural Disorder and Electron Transport in Graphene at Low Temperatures

Structural Disorder and Electron Transport in Graphene at Low Temperatures

Bibliographic Details
Parent link:AIP Conference Proceedings
Vol. 1909 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2017 (AMHS’17).— 2017.— [020016, 4 p.]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра высшей математики и математической физики (ВММФ)
Other Authors: Bobenko N. G. Nadezhda Georgievna, Egorushkin V. E., Melnikova N. V., Ponomarev A. N. Aleksandr Nikolaevich, Belosludtseva A. A., Barkalov L. D.
Summary:Title screen
A theoretical study of electron transport characteristics of metalized epitaxial graphene with impurities and structural inhomogeneous of the short-range order type was performed. The electron relaxation time, mean free path, and diffusion coefficient were calculated and shown to be of the same order of magnitude as the corresponding values for phonon characteristics. It means that electron scattering on the short-range ordered domains has to be taken into account, especially at low temperatures when it may dominate phonon scattering.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2017
Subjects:
электронный ресурс
труды учёных ТПУ
электронный перенос
графены
низкие температуры
диффузия
рассеяние
электроны
бинарные сплавы
electronic transport
graphene
scattering
magnetic ordering
electron scattering
Online Access:https://doi.org/10.1063/1.5013697
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=657087

Internet

https://doi.org/10.1063/1.5013697

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