Effect of surface modification by silicon ion beam on microstructure and chemical composition of near-surface layers of titanium nickelide

Bibliografiske detaljer
Parent link:Inorganic Materials: Applied Research.— , 2010-
Vol. 4, iss. 5.— 2013.— [P. 457-463]
Institution som forfatter: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра физики высоких технологий в машиностроении (ФВТМ)
Andre forfattere: Psakhie S. G. Sergey Grigorievich, Lotkov A. I., Meisner S. N., Meisner L. L., Sergeev V. P. Viktor Petrovich, Sungatulin A. R.
Summary:Title screen
Regularities of changes in chemical composition and microstructure of titanium nickelide upon high-dose ion-beam implantation of silicon into its surface were studied. It was shown that irradiation of a TiNi alloy with silicon ion beams results in formation of a surface oxide layer about six times thicker than that at the surface of the unirradiated alloy. The surface oxide layer of the ion-beam-modified alloy has an oxygen concentration which is ~20% greater than that of the unmodified TiNi surface layer and lacks nickel, whose concentration is near zero to a sample depth of about 20 nm. Investigation of the near-surface region beneath the irradiated surface of TiNi samples by electron backscatter diffraction revealed that, under the action of a silicon ion beam, the near-surface region of individual B2-phase grains rising to the surface is fragmented with formation of a grain-subgrain structure with fragment (grain) sizes decreased down to 5 to 15 µm. It was suggested that grain orientation influences the observed effect.
Режим доступа: по договору с организацией-держателем ресурса
Sprog:engelsk
Udgivet: 2013
Fag:
Online adgang:http://dx.doi.org/10.1134/S2075113313050134
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=654299
Beskrivelse
Summary:Title screen
Regularities of changes in chemical composition and microstructure of titanium nickelide upon high-dose ion-beam implantation of silicon into its surface were studied. It was shown that irradiation of a TiNi alloy with silicon ion beams results in formation of a surface oxide layer about six times thicker than that at the surface of the unirradiated alloy. The surface oxide layer of the ion-beam-modified alloy has an oxygen concentration which is ~20% greater than that of the unmodified TiNi surface layer and lacks nickel, whose concentration is near zero to a sample depth of about 20 nm. Investigation of the near-surface region beneath the irradiated surface of TiNi samples by electron backscatter diffraction revealed that, under the action of a silicon ion beam, the near-surface region of individual B2-phase grains rising to the surface is fragmented with formation of a grain-subgrain structure with fragment (grain) sizes decreased down to 5 to 15 µm. It was suggested that grain orientation influences the observed effect.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1134/S2075113313050134