Positron Annihilation Spectroscopy of Vacancy Type Defects in Submicrocrystalline Copper under Annealing; AIP Conference Proceedings; Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016

Bibliografski detalji
Parent link:AIP Conference Proceedings
Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016.— 2016.— [020126, 5 p.]
Autor kompanije: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Daljnji autori: Kuznetsov P. V. Pavel Viktorovich, Lider A. M. Andrey Markovich, Bordulev Yu. S. Yuri Sergeevich, Laptev R. S. Roman Sergeevich, Mironov Yu. P. Yuriy, Rakhmatulina T. V. Tanzilya, Korznikov A. V. Alexandr
Sažetak:Title screen
The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (~1.6•10{-4}) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range [delta]Т=20-300°С are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range [delta]Т=300-670°С are dislocation-type defects.
Режим доступа: по договору с организацией-держателем ресурса
Jezik:engleski
Izdano: 2016
Teme:
Online pristup:http://dx.doi.org/10.1063/1.4966419
Format: Elektronički Poglavlje knjige
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652707

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