Positron Annihilation Spectroscopy of Vacancy Type Defects in Submicrocrystalline Copper under Annealing; AIP Conference Proceedings; Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016

Библиографические подробности
Источник:AIP Conference Proceedings
Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016.— 2016.— [020126, 5 p.]
Автор-организация: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Другие авторы: Kuznetsov P. V. Pavel Viktorovich, Lider A. M. Andrey Markovich, Bordulev Yu. S. Yuri Sergeevich, Laptev R. S. Roman Sergeevich, Mironov Yu. P. Yuriy, Rakhmatulina T. V. Tanzilya, Korznikov A. V. Alexandr
Примечания:Title screen
The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (~1.6•10{-4}) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range [delta]Т=20-300°С are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range [delta]Т=300-670°С are dislocation-type defects.
Режим доступа: по договору с организацией-держателем ресурса
Язык:английский
Опубликовано: 2016
Предметы:
Online-ссылка:http://dx.doi.org/10.1063/1.4966419
Формат: Электронный ресурс Статья
Запись в KOHA:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652707

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