Positron Annihilation Spectroscopy of Vacancy Type Defects in Submicrocrystalline Copper under Annealing
| Parent link: | AIP Conference Proceedings Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016.— 2016.— [020126, 5 p.] |
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| Other Authors: | , , , , , , |
| Summary: | Title screen The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (~1.6•10{-4}) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range [delta]Т=20-300°С are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range [delta]Т=300-670°С are dislocation-type defects. Режим доступа: по договору с организацией-держателем ресурса |
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2016
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| Subjects: | |
| Online Access: | http://dx.doi.org/10.1063/1.4966419 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652707 |