Positron Annihilation Spectroscopy of Vacancy Type Defects in Submicrocrystalline Copper under Annealing
| Parent link: | AIP Conference Proceedings Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016.— 2016.— [020126, 5 p.] |
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| Autor corporatiu: | |
| Altres autors: | , , , , , , |
| Sumari: | Title screen The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (~1.6•10{-4}) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range [delta]Т=20-300°С are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range [delta]Т=300-670°С are dislocation-type defects. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2016
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| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1063/1.4966419 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652707 |
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| 200 | 1 | |a Positron Annihilation Spectroscopy of Vacancy Type Defects in Submicrocrystalline Copper under Annealing |f P. V. Kuznetsov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 9 tit.] | ||
| 330 | |a The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (~1.6•10{-4}) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range [delta]Т=20-300°С are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range [delta]Т=300-670°С are dislocation-type defects. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\4816 |t AIP Conference Proceedings | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\17851 |t Vol. 1783 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2016 |o Proceedings of the International conference, 19–23 September 2016, Tomsk, Russia |f National Research Tomsk Polytechnic University (TPU); eds. V. E. Panin ; S. G. Psakhie ; V. M. Fomin |v [020126, 5 p.] |d 2016 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a субмикрокристаллические структуры | |
| 610 | 1 | |a границы зерен | |
| 610 | 1 | |a аннигиляция | |
| 610 | 1 | |a позитроны | |
| 610 | 1 | |a дислокации | |
| 610 | 1 | |a вакансии | |
| 610 | 1 | |a отжиг | |
| 610 | 1 | |a submicrocrystalline structure | |
| 610 | 1 | |a subgrain | |
| 610 | 1 | |a grain boundary | |
| 610 | 1 | |a positron annihilation | |
| 610 | 1 | |a dislocation | |
| 610 | 1 | |a vacancy | |
| 610 | 1 | |a annealing | |
| 701 | 1 | |a Kuznetsov |b P. V. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1952- |g Pavel Viktorovich |3 (RuTPU)RU\TPU\pers\34499 |9 17882 | |
| 701 | 1 | |a Lider |b A. M. |c Physicist |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1976-2025 |g Andrey Markovich |y Tomsk |3 (RuTPU)RU\TPU\pers\30400 |9 14743 | |
| 701 | 1 | |a Bordulev |b Yu. S. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Yuri Sergeevich |3 (RuTPU)RU\TPU\pers\31883 | |
| 701 | 1 | |a Laptev |b R. S. |c physicist, specialist in the field of non-destructive testing |c Associate Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1987- |g Roman Sergeevich |y Tomsk |3 (RuTPU)RU\TPU\pers\31884 |9 15956 | |
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| 701 | 1 | |a Rakhmatulina |b T. V. |g Tanzilya | |
| 701 | 1 | |a Korznikov |b A. V. |g Alexandr | |
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