[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors

Dettagli Bibliografici
Parent link:Microelectronics Reliability
Vol. 64 : Proceedings of the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.— 2016.— [P. 560–565]
Ente Autore: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электрических сетей и электротехники (ЭСиЭ)
Altri autori: Landel M., Gautier C., Labrousse D. Denis, Lefevre S. Stefan
Riassunto:Title screen
This paper presents experimental robustness of 600 V GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operation modes. A dedicated secured test bench has been developed and designed in order to protect as quickly as possible the Device Under Test (DUT) after failure. Some devices featured a great robustness under SC and were able to support several SC of a very long duration. On the contrary, others failed immediately at the first pulse, for a low dissipated energy. The obtained results reveal a severe dispersal in terms of SC robustness for these new emerging components. Gate behavior has been also studied, showing a leakage current during each SC, destructive or not. A part of the paper is also dedicated to the study of the effects of case temperature and DC voltage on robustness.
Режим доступа: по договору с организацией-держателем ресурса
Pubblicazione: 2016
Soggetti:
электронный ресурс
труды учёных ТПУ
короткое замыкание
испытательные стенды
надежность
колебания
транзисторы
робастность
Accesso online:http://dx.doi.org/10.1016/j.microrel.2016.07.042
Natura: Elettronico Capitolo di libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652464

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