[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors
| Parent link: | Microelectronics Reliability Vol. 64 : Proceedings of the 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.— 2016.— [P. 560–565] |
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| Autor corporatiu: | |
| Altres autors: | , , , |
| Sumari: | Title screen This paper presents experimental robustness of 600 V GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operation modes. A dedicated secured test bench has been developed and designed in order to protect as quickly as possible the Device Under Test (DUT) after failure. Some devices featured a great robustness under SC and were able to support several SC of a very long duration. On the contrary, others failed immediately at the first pulse, for a low dissipated energy. The obtained results reveal a severe dispersal in terms of SC robustness for these new emerging components. Gate behavior has been also studied, showing a leakage current during each SC, destructive or not. A part of the paper is also dedicated to the study of the effects of case temperature and DC voltage on robustness. Режим доступа: по договору с организацией-держателем ресурса |
| Publicat: |
2016
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| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1016/j.microrel.2016.07.042 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652464 |
| Sumari: | Title screen This paper presents experimental robustness of 600 V GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operation modes. A dedicated secured test bench has been developed and designed in order to protect as quickly as possible the Device Under Test (DUT) after failure. Some devices featured a great robustness under SC and were able to support several SC of a very long duration. On the contrary, others failed immediately at the first pulse, for a low dissipated energy. The obtained results reveal a severe dispersal in terms of SC robustness for these new emerging components. Gate behavior has been also studied, showing a leakage current during each SC, destructive or not. A part of the paper is also dedicated to the study of the effects of case temperature and DC voltage on robustness. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/j.microrel.2016.07.042 |