Radiation hardness tests of Avalanche Photodiodesfor FAIR, NICA, and CERN SPS experiments

Bibliographic Details
Parent link:Proceedings of Science
Vol. EPS-HEP 2015 : The European Physical Society Conference on High Energy Physics, 22-29 July 2015, Vienna, Austria.— 2015.— [282, 7 p.]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра электроники и автоматики физических установок (№ 24) (ЭАФУ)
Other Authors: Mikhaylov V. S. Vasily Sergeevich, Kugler A. Andrey, Kushpil V. Vasily, Tlusty P. Pavel, Svoboda O. Ondrey, Selyuzhenkov I. V. Ilya Vladimirovich, Kushpil S. A. Svetlana Aleksandrovna, Ladygin V. P. Vladimir Pertovich
Summary:Title screen
Modern avalanche photodiodes with high gain are excellent device candidates for the light readout from detectors used for the high energy physics experiments. We report the results of the APDs radiation hardness study. Properties of APDs manufactured by Ketek and Hamamatsu companies has been studied in terms of internal defects accumulation. Test setups for offline and online APD irradiation measurements are described. Simplified models estimating contribution of various noise components are discussed in comparison with data achieved by static and dynamic characteristics analysis. The results of the APDs investigations after irradiation using secondary neutrons from the cyclotron facility U120M at the Nuclear Physics Institute of CAS in Rež are ˇ presented.
Published: 2015
Subjects:
Online Access:http://pos.sissa.it/archive/conferences/234/282/EPS-HEP2015_282.pdf
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=651235