Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

Bibliographic Details
Parent link:IEEE Transactions on Instrumentation and Measurement.— , 1960-
Vol. 64, iss. 6.— 2015.— [P. 1533-1538]
Corporate Author: Национальный исследовательский Томский политехнический университет Энергетический институт Кафедра электроснабжения промышленных предприятий
Other Authors: Novikov S. A. Sergey Avtonomovich, Lebedeva N., Pierz K., Satrapinski A.
Summary:Title screen
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2015
Subjects:
электронный ресурс
труды учёных ТПУ
квантовый эффект Холла
точность измерения
Online Access:http://dx.doi.org/10.1109/TIM.2014.2385131
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650526

Similar Items

Similar Items