Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene
| Parent link: | IEEE Transactions on Instrumentation and Measurement.— , 1960- Vol. 64, iss. 6.— 2015.— [P. 1533-1538] |
|---|---|
| Corporate Author: | |
| Other Authors: | , , , |
| Summary: | Title screen Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9. Режим доступа: по договору с организацией-держателем ресурса |
| Published: |
2015
|
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1109/TIM.2014.2385131 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650526 |