Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene; IEEE Transactions on Instrumentation and Measurement; Vol. 64, iss. 6
| Parent link: | IEEE Transactions on Instrumentation and Measurement.— , 1960- Vol. 64, iss. 6.— 2015.— [P. 1533-1538] |
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| Yhteisötekijä: | |
| Muut tekijät: | , , , |
| Yhteenveto: | Title screen Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9. Режим доступа: по договору с организацией-держателем ресурса |
| Kieli: | englanti |
| Julkaistu: |
2015
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| Aiheet: | |
| Linkit: | http://dx.doi.org/10.1109/TIM.2014.2385131 |
| Aineistotyyppi: | Elektroninen Kirjan osa |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650526 |
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| 200 | 1 | |a Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene |f S. A. Novikov, N. Lebedeva, K. Pierz, A. Satrapinski | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 1538 (18 tit.)] | ||
| 330 | |a Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) · ~1011 cm-2 and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (=7 T) showed a relative agreement within ·10-9. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t IEEE Transactions on Instrumentation and Measurement |d 1960- | ||
| 463 | |t Vol. 64, iss. 6 |v [P. 1533-1538] |d 2015 | ||
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| 701 | 1 | |a Satrapinski |b A. | |
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