The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

Detalles Bibliográficos
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine.— 2016.— [012047, 5 p.]
Autor Corporativo: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора
Outros autores: Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, Butko Ya. A. Yana Aleksandrovna
Summary:Title screen
The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD.
Publicado: 2016
Subjects:
электронный ресурс
труды учёных ТПУ
реакторы
ИРТ-Т
нейтронное легирование
монокристаллический кремний
тепловые нейтроны
Acceso en liña:http://dx.doi.org/10.1088/1757-899X/135/1/012047
http://earchive.tpu.ru/handle/11683/34837
Formato: Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650334

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