The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

Bibliographic Details
Parent link:	IOP Conference Series: Materials Science and Engineering Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine.— 2016.— [012047, 5 p.]
Corporate Author:	Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора
Other Authors:	Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, Butko Ya. A. Yana Aleksandrovna
Summary:	Title screen The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD.
Published:	2016
Subjects:	электронный ресурс труды учёных ТПУ реакторы ИРТ-Т нейтронное легирование монокристаллический кремний тепловые нейтроны
Online Access:	http://dx.doi.org/10.1088/1757-899X/135/1/012047 http://earchive.tpu.ru/handle/11683/34837
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650334

Internet