The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access; IOP Conference Series: Materials Science and Engineering; Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine

Detaylı Bibliyografya
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine.— 2016.— [012047, 5 p.]
Müşterek Yazar: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора
Diğer Yazarlar: Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, Butko Ya. A. Yana Aleksandrovna
Özet:Title screen
The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD.
Dil:İngilizce
Baskı/Yayın Bilgisi: 2016
Konular:
Online Erişim:http://dx.doi.org/10.1088/1757-899X/135/1/012047
http://earchive.tpu.ru/handle/11683/34837
Materyal Türü: Elektronik Kitap Bölümü
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650334

MARC

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330 |a The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD. 
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610 1 |a электронный ресурс 
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701 1 |a Emets  |b E. G.  |c physicist, specialist in the field of nuclear physics  |c Engineer-designer of Tomsk Polytechnic University  |f 1984-  |g Evgeny Gennadievich  |3 (RuTPU)RU\TPU\pers\33721 
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