The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access; IOP Conference Series: Materials Science and Engineering; Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine.— 2016.— [012047, 5 p.] |
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| Müşterek Yazar: | |
| Diğer Yazarlar: | , , , |
| Özet: | Title screen The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD. |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2016
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| Konular: | |
| Online Erişim: | http://dx.doi.org/10.1088/1757-899X/135/1/012047 http://earchive.tpu.ru/handle/11683/34837 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650334 |
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| 200 | 1 | |a The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access |f V. A. Varlachev [et al.] | |
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| 330 | |a The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD. | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\15011 |t Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine |o VIII International Scientific Conference, 1–3 June 2016, Tomsk, Russia |o [proceedings] |v [012047, 5 p.] |d 2016 | |
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| 701 | 1 | |a Varlachev |b V. A. |c physicist, specialist in the field of nuclear physics |c Professor-consultant of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1948- |g Valery Aleksandrovich |y Tomsk |3 (RuTPU)RU\TPU\pers\33722 |9 17353 | |
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