The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine.— 2016.— [012047, 5 p.] |
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| Corporate Author: | |
| Other Authors: | , , , |
| Summary: | Title screen The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD. |
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2016
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| Online Access: | http://dx.doi.org/10.1088/1757-899X/135/1/012047 http://earchive.tpu.ru/handle/11683/34837 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650334 |
| Summary: | Title screen The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD. |
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| DOI: | 10.1088/1757-899X/135/1/012047 |