APA (7th ed.) Citation

Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора, Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, & Butko Ya. A. Yana Aleksandrovna. (2016). The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access; IOP Conference Series: Materials Science and Engineering; Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine. 2016. https://doi.org/10.1088/1757-899X/135/1/012047

Chicago Style (17th ed.) Citation

Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора, Varlachev V. A. Valery Aleksandrovich, Golovathkiy A. V. Aleksey Vasilievich, Emets E. G. Evgeny Gennadievich, and Butko Ya. A. Yana Aleksandrovna. The Ability to Create NTD Silicon Technology in the IRT-T Reactor in a Horizontal Experimental Channel with One-side Access; IOP Conference Series: Materials Science and Engineering; Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine. 2016, 2016. https://doi.org/10.1088/1757-899X/135/1/012047.

MLA (9th ed.) Citation

Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 33 ядерного реактора, et al. The Ability to Create NTD Silicon Technology in the IRT-T Reactor in a Horizontal Experimental Channel with One-side Access; IOP Conference Series: Materials Science and Engineering; Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine. 2016, 2016. https://doi.org/10.1088/1757-899X/135/1/012047.