Structure and phase composition of a chromium–silicon system modified by high current electron beams; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 6, № 1
| Parent link: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.— , 2007- Vol. 6, № 1.— 2012.— [P. 67-72] |
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| Інші автори: | , , , , , |
| Резюме: | Title screen The results of studies of the structure-phase state of a chromium-coated silicon substrate system’s subsurface layer treated with low-energy high-current electron beams, 50–200 µs in duration and with an energy density of 15 J/cm2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2–38 µm, chromium-enriched silicon dendrites, chromium disilicide CrSi2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer. Режим доступа: по договору с организацией-держателем ресурса |
| Мова: | Англійська |
| Опубліковано: |
2012
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| Предмети: | |
| Онлайн доступ: | http://dx.doi.org/10.1134/S1027451012010193 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649104 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 649104 | ||
| 005 | 20250228115447.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\14265 | ||
| 035 | |a RU\TPU\network\14258 | ||
| 090 | |a 649104 | ||
| 100 | |a 20160620d2012 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Structure and phase composition of a chromium–silicon system modified by high current electron beams |f V. V. Uglov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 72 (20 tit.] | ||
| 330 | |a The results of studies of the structure-phase state of a chromium-coated silicon substrate system’s subsurface layer treated with low-energy high-current electron beams, 50–200 µs in duration and with an energy density of 15 J/cm2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2–38 µm, chromium-enriched silicon dendrites, chromium disilicide CrSi2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques |d 2007- | ||
| 463 | |t Vol. 6, № 1 |v [P. 67-72] |d 2012 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a стуктура | |
| 610 | 1 | |a фазовый состав | |
| 610 | 1 | |a хром-кремний | |
| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 |9 19776 | |
| 701 | 1 | |a Kvasov |b N. T. |c physicist |c leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1949- |g Nikolay Trofimovich |3 (RuTPU)RU\TPU\pers\36768 |9 19807 | |
| 701 | 1 | |a Petukhov |b Y. A. | |
| 701 | 1 | |a Teresov |b A. D. | |
| 701 | 1 | |a Koval |b N. N. |c specialist in the field of electronics |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Nikolay Nikolaevich |3 (RuTPU)RU\TPU\pers\34748 |9 18098 | |
| 701 | 1 | |a Ivanov |b Yu. F. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1955- |g Yuriy Fedorovich |3 (RuTPU)RU\TPU\pers\33559 |9 17226 | |
| 801 | 2 | |a RU |b 63413507 |c 20210628 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1134/S1027451012010193 | |
| 942 | |c CF | ||