Structure and phase composition of a chromium–silicon system modified by high current electron beams

Bibliographic Details
Parent link:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.— , 2007-
Vol. 6, № 1.— 2012.— [P. 67-72]
Other Authors: Uglov V. V. Vladimir Vasilievich, Kvasov N. T. Nikolay Trofimovich, Petukhov Y. A., Teresov A. D., Koval N. N. Nikolay Nikolaevich, Ivanov Yu. F. Yuriy Fedorovich
Summary:Title screen
The results of studies of the structure-phase state of a chromium-coated silicon substrate system’s subsurface layer treated with low-energy high-current electron beams, 50–200 µs in duration and with an energy density of 15 J/cm2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2–38 µm, chromium-enriched silicon dendrites, chromium disilicide CrSi2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2012
Subjects:
Online Access:http://dx.doi.org/10.1134/S1027451012010193
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649104