Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit; Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016

Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit; Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016

Xehetasun bibliografikoak
Parent link:Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016.— 2016.— [P. 571-572]
Egile korporatiboa: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Beste egile batzuk: Sidelev D. V. Dmitry Vladimirovich, Yuryeva A. V. Alena Victorovna, Krivobokov V. P. Valery Pavlovich, Shabunin A. S. Artem Sergeevich, Syrtanov M. S. Maksim Sergeevich, Koyshybaeva Zh. K. Zhanymgul Koyshybaykyzy
Gaia:Title screen
This article reports on technological possibilities of magnetron sputtering systemswith solid-state and liquid targets to deposition of Al films and its structure. There is shown acomparing of deposition rate of magnetron sputtering systems with direct current (DC), midfrequency(MF) and high power pulsed (HiPIMS) supplies. The dependence of plasmacomposition, films stricture and sputtering technique parameters is obtained.
Hizkuntza:ingelesa
Argitaratua: 2016
Gaiak:
электронный ресурс
труды учёных ТПУ
Sarrera elektronikoa:http://spbopen.spbau.com/PDF/Book_of_Abstracts_SPBOPEN_2016.pdf#page=571
Formatua: Baliabide elektronikoa Liburu kapitulua
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648815

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