Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit; Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016

Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit; Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016

Podrobná bibliografie
Parent link:Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016.— 2016.— [P. 571-572]
Korporace: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Další autoři: Sidelev D. V. Dmitry Vladimirovich, Yuryeva A. V. Alena Victorovna, Krivobokov V. P. Valery Pavlovich, Shabunin A. S. Artem Sergeevich, Syrtanov M. S. Maksim Sergeevich, Koyshybaeva Zh. K. Zhanymgul Koyshybaykyzy
Shrnutí:Title screen
This article reports on technological possibilities of magnetron sputtering systemswith solid-state and liquid targets to deposition of Al films and its structure. There is shown acomparing of deposition rate of magnetron sputtering systems with direct current (DC), midfrequency(MF) and high power pulsed (HiPIMS) supplies. The dependence of plasmacomposition, films stricture and sputtering technique parameters is obtained.
Jazyk:angličtina
Vydáno: 2016
Témata:
электронный ресурс
труды учёных ТПУ
On-line přístup:http://spbopen.spbau.com/PDF/Book_of_Abstracts_SPBOPEN_2016.pdf#page=571
Médium: Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648815

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