Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit

Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit

Dades bibliogràfiques
Parent link:Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016.— 2016.— [P. 571-572]
Autor corporatiu: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Altres autors: Sidelev D. V. Dmitry Vladimirovich, Yuryeva A. V. Alena Victorovna, Krivobokov V. P. Valery Pavlovich, Shabunin A. S. Artem Sergeevich, Syrtanov M. S. Maksim Sergeevich, Koyshybaeva Zh. K. Zhanymgul Koyshybaykyzy
Sumari:Title screen
This article reports on technological possibilities of magnetron sputtering systemswith solid-state and liquid targets to deposition of Al films and its structure. There is shown acomparing of deposition rate of magnetron sputtering systems with direct current (DC), midfrequency(MF) and high power pulsed (HiPIMS) supplies. The dependence of plasmacomposition, films stricture and sputtering technique parameters is obtained.
Idioma:anglès
Publicat: 2016
Matèries:
электронный ресурс
труды учёных ТПУ
Accés en línia:http://spbopen.spbau.com/PDF/Book_of_Abstracts_SPBOPEN_2016.pdf#page=571
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648815

Internet

http://spbopen.spbau.com/PDF/Book_of_Abstracts_SPBOPEN_2016.pdf#page=571

Ítems similars