Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit

Détails bibliographiques
Parent link:	Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016: Book of Abstracts 3rd International School and Conference, St Petersburg, Russia, March 28-30, 2016. [P. 571-572].— , 2016
Autres auteurs:	Sidelev D. V. Dmitry Vladimirovich, Yuryeva A. V. Alena Victorovna, Krivobokov V. P. Valery Pavlovich, Shabunin A. S. Artem Sergeevich, Syrtanov M. S. Maksim Sergeevich, Koyshybaeva Zh. K. Zhanymgul Koyshybaykyzy
Résumé:	Title screen This article reports on technological possibilities of magnetron sputtering systemswith solid-state and liquid targets to deposition of Al films and its structure. There is shown acomparing of deposition rate of magnetron sputtering systems with direct current (DC), midfrequency(MF) and high power pulsed (HiPIMS) supplies. The dependence of plasmacomposition, films stricture and sputtering technique parameters is obtained.
Langue:	anglais
Publié:	2016
Sujets:	электронный ресурс труды учёных ТПУ
Accès en ligne:	http://spbopen.spbau.com/PDF/Book_of_Abstracts_SPBOPEN_2016.pdf#page=571
Format:	Électronique Chapitre de livre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648815

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