Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit; Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016

Bibliografiska uppgifter
Parent link:Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016.— 2016.— [P. 571-572]
Institutionella upphovsmän: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Övriga upphovsmän: Sidelev D. V. Dmitry Vladimirovich, Yuryeva A. V. Alena Victorovna, Krivobokov V. P. Valery Pavlovich, Shabunin A. S. Artem Sergeevich, Syrtanov M. S. Maksim Sergeevich, Koyshybaeva Zh. K. Zhanymgul Koyshybaykyzy
Sammanfattning:Title screen
This article reports on technological possibilities of magnetron sputtering systemswith solid-state and liquid targets to deposition of Al films and its structure. There is shown acomparing of deposition rate of magnetron sputtering systems with direct current (DC), midfrequency(MF) and high power pulsed (HiPIMS) supplies. The dependence of plasmacomposition, films stricture and sputtering technique parameters is obtained.
Språk:engelska
Publicerad: 2016
Ämnen:
Länkar:http://spbopen.spbau.com/PDF/Book_of_Abstracts_SPBOPEN_2016.pdf#page=571
Materialtyp: Elektronisk Bokavsnitt
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648815

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463 |t Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016  |o Book of Abstracts 3rd International School and Conference, St Petersburg, Russia, March 28-30, 2016  |v [P. 571-572]  |d 2016 
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