Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit

Aluminum films deposition by magnetron sputtering systems:Influence of target state and pulsing unit

Bibliografski detalji
Parent link:Optoelectronics, Photonics, Engineering and Nanostructures, OPEN 2016.— 2016.— [P. 571-572]
Autori kompanije: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Daljnji autori: Sidelev D. V. Dmitry Vladimirovich, Yuryeva A. V. Alena Victorovna, Krivobokov V. P. Valery Pavlovich, Shabunin A. S. Artem Sergeevich, Syrtanov M. S. Maksim Sergeevich, Koyshybaeva Zh. K. Zhanymgul Koyshybaykyzy
Sažetak:Title screen
This article reports on technological possibilities of magnetron sputtering systemswith solid-state and liquid targets to deposition of Al films and its structure. There is shown acomparing of deposition rate of magnetron sputtering systems with direct current (DC), midfrequency(MF) and high power pulsed (HiPIMS) supplies. The dependence of plasmacomposition, films stricture and sputtering technique parameters is obtained.
Jezik:engleski
Izdano: 2016
Teme:
электронный ресурс
труды учёных ТПУ
Online pristup:http://spbopen.spbau.com/PDF/Book_of_Abstracts_SPBOPEN_2016.pdf#page=571
Format: Elektronički Poglavlje knjige
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648815
Opis
Sažetak:Title screen
This article reports on technological possibilities of magnetron sputtering systemswith solid-state and liquid targets to deposition of Al films and its structure. There is shown acomparing of deposition rate of magnetron sputtering systems with direct current (DC), midfrequency(MF) and high power pulsed (HiPIMS) supplies. The dependence of plasmacomposition, films stricture and sputtering technique parameters is obtained.

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