Peculiarities of Electrical Characteristics of Ferroelectric Memory Elements Based on PZT-Films

Bibliographic Details
Parent link:Russian Physics Journal: Scientific Journal.— , 1965-
Vol. 58, iss. 9.— 2016.— [P. 1301-1305]
Corporate Author: Национальный исследовательский Томский политехнический университет Институт неразрушающего контроля Кафедра физических методов и приборов контроля качества
Other Authors: Delimova L. A., Gushchina E. V., Yuferev V. S., Ratnikov V. V., Zaitseva N. V., Sharenkova N. V., Seregin D. S., Vorotilov K. A., Sigov A. S. Aleksandr Sergeevich
Summary:Title screen
Self-polarization directed from the top electrode to the bottom one is found in the ferroelectric Pt/PZT/Pt capacitor using the method of depolarizing hysteresis loops. We attribute the self-polarization to the flexoelectric effect caused by the mismatch between the lattice parameters of the bottom Pt film and PZT-film. This result is consistent with the measurements of photocurrent in the short-circuited structure that also indicate the presence of the downward polarization in the PZT-film.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2016
Subjects:
Online Access:http://dx.doi.org/10.1007/s11182-016-0647-5
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648470