Carbon saturation of silicon target under the action of pulsed high-intensity ion beam; IOP Conference Series: Materials Science and Engineering; Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015)

Carbon saturation of silicon target under the action of pulsed high-intensity ion beam; IOP Conference Series: Materials Science and Engineering; Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015)

Chi tiết về thư mục
Parent link:	IOP Conference Series: Materials Science and Engineering Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015).— 2016.— [012054, 9 p.]
Tác giả chính:	Aktaev N. E. Nurken Erbolatovich
Tác giả của công ty:	Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
Tác giả khác:	Remnev G. E. Gennady Efimovich
Tóm tắt:	Title screen The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming. Режим доступа: по договору с организацией-держателем ресурса
Ngôn ngữ:	Tiếng Anh
Được phát hành:	2016
Những chủ đề:	электронный ресурс труды учёных ТПУ насыщение углерод кремниевые мишени импульсные пучки ионные пучки кремний поверхности
Truy cập trực tuyến:	http://dx.doi.org/10.1088/1757-899X/110/1/012054 http://earchive.tpu.ru/handle/11683/18076
Định dạng:	Điện tử Chương của sách
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647029

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