Carbon saturation of silicon target under the action of pulsed high-intensity ion beam

Carbon saturation of silicon target under the action of pulsed high-intensity ion beam

Bibliographic Details
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015).— 2016.— [012054, 9 p.]
Main Author: Aktaev N. E. Nurken Erbolatovich
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
Other Authors: Remnev G. E. Gennady Efimovich
Summary:Title screen
The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2016
Subjects:
электронный ресурс
труды учёных ТПУ
насыщение
углерод
кремниевые мишени
импульсные пучки
ионные пучки
кремний
поверхности
Online Access:http://dx.doi.org/10.1088/1757-899X/110/1/012054
http://earchive.tpu.ru/handle/11683/18076
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647029

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