Carbon saturation of silicon target under the action of pulsed high-intensity ion beam
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015).— 2016.— [012054, 9 p.] |
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| Zusammenfassung: | Title screen The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming. Режим доступа: по договору с организацией-держателем ресурса |
| Sprache: | Englisch |
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2016
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| Online-Zugang: | http://dx.doi.org/10.1088/1757-899X/110/1/012054 http://earchive.tpu.ru/handle/11683/18076 |
| Format: | Elektronisch Buchkapitel |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647029 |