Carbon saturation of silicon target under the action of pulsed high-intensity ion beam; IOP Conference Series: Materials Science and Engineering; Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015)
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015).— 2016.— [012054, 9 p.] |
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| मुख्य लेखक: | |
| निगमित लेखक: | |
| अन्य लेखक: | |
| सारांश: | Title screen The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming. Режим доступа: по договору с организацией-держателем ресурса |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2016
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| विषय: | |
| ऑनलाइन पहुंच: | http://dx.doi.org/10.1088/1757-899X/110/1/012054 http://earchive.tpu.ru/handle/11683/18076 |
| स्वरूप: | इलेक्ट्रोनिक पुस्तक अध्याय |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647029 |
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| 200 | 1 | |a Carbon saturation of silicon target under the action of pulsed high-intensity ion beam |f N. E. Aktaev, G. E. Remnev | |
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| 300 | |a Title screen | ||
| 320 | |a [References: 9 tit.] | ||
| 330 | |a The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\11965 |t Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015) |o International Scientific Conference, 31 August to 10 September 2015, Tomsk, Russia |o [proceedings] |v [012054, 9 p.] |d 2016 | |
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| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |2 stltpush |3 (RuTPU)RU\TPU\pers\31500 | |
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