MOCVD growth and study of magnetic Co films; Surface Engineering; Vol. 32, iss.1
| Parent link: | Surface Engineering Vol. 32, iss.1.— 2016.— [P. 8-14] |
|---|---|
| সংস্থা লেখক: | , |
| অন্যান্য লেখক: | , , , , , , , , |
| সংক্ষিপ্ত: | Title screen The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln?(P/P°)?=?26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found. Режим доступа: по договору с организацией-держателем ресурса |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
2016
|
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://dx.doi.org/10.1179/1743294414Y.0000000424 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646835 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 646835 | ||
| 005 | 20250203095738.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\11972 | ||
| 090 | |a 646835 | ||
| 100 | |a 20160317d2016 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a GB | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a MOCVD growth and study of magnetic Co films |f S. I. Dorovskikh [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 24 tit.] | ||
| 330 | |a The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln?(P/P°)?=?26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Surface Engineering | ||
| 463 | |t Vol. 32, iss.1 |v [P. 8-14] |d 2016 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a давление | |
| 610 | 1 | |a пар | |
| 610 | 1 | |a магнитные характеристики | |
| 701 | 1 | |a Dorovskikh |b S. I. |g Svetlana Igorevna | |
| 701 | 1 | |a Hairullin (Khayrullin) |b R. R. |c specialist in the field of material science |c Engineer of Tomsk Polytechnic University |f 1992- |g Rustam Ravilievich |3 (RuTPU)RU\TPU\pers\32862 |9 16710 | |
| 701 | 1 | |a Sysoev |b S. V. |g Sergey Viktorovich | |
| 701 | 1 | |a Kriventsov |b V. V. |g Vladimir Vladimirovich | |
| 701 | 1 | |a Panin |b A. V. |c physicist |c Professor of Tomsk Polytechnic University, doctor of physical and mathematical Sciences |f 1971- |g Alexey Viktorovich |3 (RuTPU)RU\TPU\pers\34630 |9 17992 | |
| 701 | 1 | |a Shubin |b Yu. V. |g Yury Viktorovich | |
| 701 | 1 | |a Morozova |b N. B. |g Nataljya Borisovna | |
| 701 | 1 | |a Gelfond |b N. V. |g Nikolay Vasiljevich | |
| 701 | 1 | |a Korenev |b S. V. |g Sergey Vasiljevich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Физико-технический институт |b Кафедра общей физики |3 (RuTPU)RU\TPU\col\18734 |9 27183 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Институт физики высоких технологий |b Кафедра материаловедения в машиностроении |3 (RuTPU)RU\TPU\col\18688 |9 27141 |
| 801 | 2 | |a RU |b 63413507 |c 20160317 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1179/1743294414Y.0000000424 | |
| 942 | |c CF | ||