MOCVD growth and study of magnetic Co films

MOCVD growth and study of magnetic Co films

Bibliographic Details
Parent link:	Surface Engineering Vol. 32, iss.1.— 2016.— [P. 8-14]
Corporate Authors:	Национальный исследовательский Томский политехнический университет Физико-технический институт Кафедра общей физики, Национальный исследовательский Томский политехнический университет Институт физики высоких технологий Кафедра материаловедения в машиностроении
Other Authors:	Dorovskikh S. I. Svetlana Igorevna, Hairullin (Khayrullin) R. R. Rustam Ravilievich, Sysoev S. V. Sergey Viktorovich, Kriventsov V. V. Vladimir Vladimirovich, Panin A. V. Alexey Viktorovich, Shubin Yu. V. Yury Viktorovich, Morozova N. B. Nataljya Borisovna, Gelfond N. V. Nikolay Vasiljevich, Korenev S. V. Sergey Vasiljevich
Summary:	Title screen The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln?(P/P°)?=?26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found. Режим доступа: по договору с организацией-держателем ресурса
Language:	English
Published:	2016
Subjects:	электронный ресурс труды учёных ТПУ давление пар магнитные характеристики
Online Access:	http://dx.doi.org/10.1179/1743294414Y.0000000424
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646835

Internet

http://dx.doi.org/10.1179/1743294414Y.0000000424