MOCVD growth and study of magnetic Co films

MOCVD growth and study of magnetic Co films

Dettagli Bibliografici
Parent link:Surface Engineering
Vol. 32, iss.1.— 2016.— [P. 8-14]
Enti autori: Национальный исследовательский Томский политехнический университет Физико-технический институт Кафедра общей физики, Национальный исследовательский Томский политехнический университет Институт физики высоких технологий Кафедра материаловедения в машиностроении
Altri autori: Dorovskikh S. I. Svetlana Igorevna, Hairullin (Khayrullin) R. R. Rustam Ravilievich, Sysoev S. V. Sergey Viktorovich, Kriventsov V. V. Vladimir Vladimirovich, Panin A. V. Alexey Viktorovich, Shubin Yu. V. Yury Viktorovich, Morozova N. B. Nataljya Borisovna, Gelfond N. V. Nikolay Vasiljevich, Korenev S. V. Sergey Vasiljevich
Riassunto:Title screen
The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln?(P/P°)?=?26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
Режим доступа: по договору с организацией-держателем ресурса
Lingua:inglese
Pubblicazione: 2016
Soggetti:
электронный ресурс
труды учёных ТПУ
давление
пар
магнитные характеристики
Accesso online:http://dx.doi.org/10.1179/1743294414Y.0000000424
Natura: Elettronico Capitolo di libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646835
Descrizione
Riassunto:Title screen
The Co(N’acN’ac)2 complex, namely bis(2-methylamino-4-methyliminato-penten) cobalt(II), was for the first time used as a precursor for producing Co films via metal–organic chemical vapour deposition. This chelate exhibits good volatility ln?(P/P°)?=?26·45–14006·7/T(K) at moderate temperature values (382–427 K). Co films were grown on Si (100) substrates and studied by X-ray diffraction, extended X-ray absorption fine structure, atomic force and scanning electron microscopy, energy dispersive X-ray analysis and optical profilometry. Deposition conditions corresponding to the optimal electrical and magnetic characteristics of Co thin films are found.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1179/1743294414Y.0000000424

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