Generation of interstitial atoms in FCC single crystals
| Parent link: | Russian Physics Journal: Scientific Journal.— , 1965- Vol. 58, iss. 4.— 2015.— [P. 446-453] |
|---|---|
| Egile nagusia: | |
| Erakunde egilea: | |
| Beste egile batzuk: | , |
| Gaia: | Title screen A mathematical model of generation and accumulation of interstitial atoms in plastically deformable pure FCC metals is suggested based on the concept of hardening and recovery that links the phenomena proceeding in the deformable crystal material with the behavior of crystal structure defects. The model comprises kinetics equations for point defects - mono- and bivacancies and interstitial atoms - written with allowance for mechanisms of their generation and precipitation on sinks. Special attention is given to investigation of the influence of the velocity and character of motion of helical segments of expanding dislocation loops on generation of interstitial atoms. Concentrations of interstitial atoms generated in the process of plastic deformation are calculated. Режим доступа: по договору с организацией-держателем ресурса |
| Hizkuntza: | ingelesa |
| Argitaratua: |
2015
|
| Gaiak: | |
| Sarrera elektronikoa: | http://dx.doi.org/10.1007/s11182-015-0519-4 |
| Formatua: | Baliabide elektronikoa Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645564 |