Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation; Journal of Physics; Vol. 635
| Parent link: | Journal of Physics: Conference Series Vol. 635.— 2015.— [062007, 2 p.] |
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| Enti autori: | , , |
| Altri autori: | , , , , |
| Riassunto: | Title screen The new experiments on channeling of 255 MeV in a 0.7 ?m silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities. |
| Lingua: | inglese |
| Pubblicazione: |
2015
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| Soggetti: | |
| Accesso online: | http://earchive.tpu.ru/handle/11683/36141 http://dx.doi.org/10.1088/1742-6596/635/6/062007 |
| Natura: | Elettronico Capitolo di libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645391 |