Bayazitov R. M., Antonova L.Kh, Khaibullin I. B., & Remnev G. E. Gennady Efimovich. (1998). Pulsed ion beam formation of highly doped GaAs layers; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 139, iss. 1-4. 1998. https://doi.org/10.1016/S0168-583X(98)00030-5
Trích dẫn kiểu Chicago (xuất bản lần thứ 7)Bayazitov R. M., Antonova L.Kh, Khaibullin I. B., và Remnev G. E. Gennady Efimovich. Pulsed Ion Beam Formation of Highly Doped GaAs Layers; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 139, Iss. 1-4. 1998, 1998. https://doi.org/10.1016/S0168-583X(98)00030-5.
Trích dẫn kiểu MLA (xuất bản lần thứ 9)Bayazitov R. M., et al. Pulsed Ion Beam Formation of Highly Doped GaAs Layers; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 139, Iss. 1-4. 1998, 1998. https://doi.org/10.1016/S0168-583X(98)00030-5.