APA (7th ed.) Citation

Bayazitov R. M., Antonova L.Kh, Khaibullin I. B., & Remnev G. E. Gennady Efimovich. (1998). Pulsed ion beam formation of highly doped GaAs layers; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 139, iss. 1-4. 1998. https://doi.org/10.1016/S0168-583X(98)00030-5

Chicago Style (17th ed.) Citation

Bayazitov R. M., Antonova L.Kh, Khaibullin I. B., and Remnev G. E. Gennady Efimovich. Pulsed Ion Beam Formation of Highly Doped GaAs Layers; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 139, Iss. 1-4. 1998, 1998. https://doi.org/10.1016/S0168-583X(98)00030-5.

MLA (9th ed.) Citation

Bayazitov R. M., et al. Pulsed Ion Beam Formation of Highly Doped GaAs Layers; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 139, Iss. 1-4. 1998, 1998. https://doi.org/10.1016/S0168-583X(98)00030-5.