Pulsed ion beam formation of highly doped GaAs layers
Tallennettuna:
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal.— , 1984- Vol. 139, iss. 1-4.— 1998.— [P. 418-421] |
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| Muut tekijät: | , , , |
| Yhteenveto: | Title screen The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated. Режим доступа: по договору с организацией-держателем ресурса |
| Kieli: | englanti |
| Julkaistu: |
1998
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| Aiheet: | |
| Linkit: | http://dx.doi.org/10.1016/S0168-583X(98)00030-5 |
| Aineistotyyppi: | Elektroninen Kirjan osa |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=645124 |
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