Strain Localization Parameters of AlCu4MgSi Processed by High-Energy Electron Beams; AIP Conference Proceedings; Vol. 1683 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures
| Parent link: | AIP Conference Proceedings Vol. 1683 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures.— 2015.— [020129, 4 p.] |
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| সংস্থা লেখক: | , |
| অন্যান্য লেখক: | , , , |
| সংক্ষিপ্ত: | Title screen The influence of the electron beam surface treatment of AlCu4MgSi on the strain localization parameters and on the critical strain value of the Portevin-Le Chatelier effect has been considered. The strain localization parameters were measured using speckle imaging of the specimens subjected to the constant strain rate uniaxial tension at a room temperature. Impact of the surface treatment on the Portevin-Le Chatelier effect has been investigated. Режим доступа: по договору с организацией-держателем ресурса |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
2015
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://dx.doi.org/10.1063/1.4932819 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644963 |